| 1. | Measuring of dissipation power
耗散功率的测定 |
| 2. | Anode dissipation power
屏极耗散功率 |
| 3. | Measurements of the electrical properties of transmitting tubes - measuring methods of maximum grid dissipation power
发射管电性能测试方法栅极最大耗散功率的测试方法 |
| 4. | Based on the analysis of damper movement during load test period , a concept for the dissipation power of damper is suggested
摘要根据阻尼器的加载过程分析，提出了阻尼器耗散功率概念。 |
| 5. | Measurements of the electrical properties of transmitting tubes - measuring methods of maximum anode dissipation power and anode overload dissipation power
发射管电性能测试方法阳极最大耗散功率和阳极过载耗散功率的测试方法 |
| 6. | Comparing with the traditional method using hysteretic loop , the method of dissipation power seems obviously more useful when assessing the capacity of damper ' s power dissipation
对耗散功率谱法和传统滞回曲线法在评价阻尼器耗能能力方面进行了比较，特别在复杂加载情况下，耗散功率谱法具有显著的优点。 |
| 7. | Over hot is the main reason of pin switches ’ failure , therefore thermo - resistance and device dissipation power measurement to estimate the inner temperature accurately is necessary dramatically
由于开关损坏的主要原因是过热损坏,对pin二极管进行热阻和功耗测试以准确估计器件的内部温升是非常必要的。 |
| 8. | In recent years , all kinds of chip embedded with sram is becoming more and more popular , which demonstrate excellent characteristics such as fast data store speed , high reliability and low dissipation power
近年来，集成sram的各种系统芯片已屡见不鲜，它们在改善系统性能、提高芯片可靠性、降低成本与功耗等方面都起到了积极的作用。 |
| 9. | The main works are as the follows . in view of the contradiction among frequency , output power and dissipation power , propose deep - trench junction termination structure filling with isolated materials and collector - combed ( base - combed ) structure
主要工作包括以下几个方面：针对频率与功率、功耗的矛盾，提出了绝缘深阱结终端结构和梳状集电结(基区)结构。 |
| 10. | And the results of calculation and numerical simulation indicate , without increasing the intrinsic collector - junction area of power devices , collector - combed structure helps to raise the intrinsic heat - dissipating area and base ' s perimeter , improve heat - dissipating method of each cell of the chip , enhance the distribution uniformity of junction temperature and current of each cell of the chip , reduce the thermal resistance and raise the dissipation power pd and output power p0 , fairly well relax the contradiction among frequency , out - put power and dissipation power of the devices , and further improve the devices " property against second breakdown
而计算分析和二维数值模拟分析结果表明：梳状集电结(基区)结构在不增加器件本征集电结面积的条件下，增大了器件的本征散热面积和基区周长，改进了每个子器件单元内的散热方式，提高了单元内结温和电流分布的均匀性，降低了器件的热阻，增大了器件的耗散功率和输出功率，较好地缓解了目前传统结构中频率与功率、功耗的矛盾，并有利于改善器件抗二次击穿的性能。 |
